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4.9-5.8 GHz High-Linearity Power Amplifier
SST11LP12
SST1LP124.9-5.8 GHz High-Linearity Power Amplifier
Preliminary Specifications
FEATURES:
* High Gain: - Typically 35 dB gain across 4.9-5.8 GHz over temperature 0C to +85C High linear output power: - ~28 dBm P1dB (Pulsed single-tone signal) - Meet 802.11a OFDM ACPR requirement up to 23+ dBm over ~ entire band - Added EVM~4% up to 21 dBm for 54 Mbps 802.11a signal High power-added efficiency/Low operating current for 54 Mbps 802.11a applications - ~12% @ POUT = 21 dBm for 54 Mbps Built-in Ultra-low IREF power-up/down control - IREF <3 mA Low idle current - ~130 mA ICQ High speed power up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1.5/1.0 dB gain/power variation between 0C to +85C - ~1 dB detector variation over 0C to +85C * Low shut-down current (< 0.1 A) * On-chip power detection * 20 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 16-contact WQFN (3mm x 3mm) - Non-Pb (lead-free) packages available
*
*
* * *
APPLICATIONS:
* * * * WLAN (IEEE 802.11a) Japan WLAN HyperLAN2 Multimedia
PRODUCT DESCRIPTION
The SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.8 GHz). It typically provides 35 dB gain with 16% poweradded efficiency @ POUT = 23 dBm. The SST11LP12 has excellent linearity, typically ~4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 23+ dBm. SST11LP12 also has wide-range (>20 dB), temperature-stable (~1 dB over 85C), singleended/differential power detectors which lower users' cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF <3 mA) makes the SST11LP12 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11LP12 ideal for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applications. The SST11LP12 is offered in 16-contact WQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions.
(c)2006 SST Communications Corp. S71278-01-000 1/06 1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
FUNCTIONAL BLOCKS
FUNCTIONAL BLOCK DIAGRAM
VCC1 VCC2 VCC3 14 NC 13 12 NC 11 RFOUT 10 RFOUT Bias Circuit 5 NC 6 VREF 7 VREF 8 Det_ref
1278 B1.1
16 NC RFIN RFIN VCCb 1 2 3 4
15
9
Det
(c)2006 SST Communications Corp.
S71278-01-000
1/06
2
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
PIN ASSIGNMENTS
VCC1
VCC2
VCC3 14
16 NC RFIN RFIN VCCb 1
15
13 12 NC
Top View
2 3 4 RF and DC GND 0 5 NC 6 VREF 7 VREF 8 Det_ref
1278 16-wqfn P1.0
NC 11 RFOUT 10 RFOUT 9 Det
(contacts facing down)
FIGURE 1: PIN ASSIGNMENTS FOR 16-CONTACT WQFN
PIN DESCRIPTIONS
TABLE 1: PIN DESCRIPTION
Symbol GND NC RFIN RFIN VCCb NC VREF VREF Det_ref Det RFOUT RFOUT NC NC VCC3 VCC2 VCC1
1. I=Input, O=Output
Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Pin Name Ground No Connection
Type1
Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Unconnected pin
I I Power Supply No Connection PWR PWR O O O O No Connection No Connection Power Supply Power Supply Power Supply PWR PWR PWR PWR
RF input, DC decoupled RF input, DC decoupled Supply voltage for bias circuit Unconnected pin Current Control Current Control On-chip power detector reference On-chip power detector RF output RF output Unconnected pin Unconnected pin Power supply, 3rd stage Power supply, 2nd stage Power supply, 1st stage
T1.1 1278
(c)2006 SST Communications Corp.
S71278-01-000
1/06
3
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 2 through 10 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 14, 15, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds OPERATING RANGE
Range Industrial Ambient Temp -40C to +85C VCC 3.3V
TABLE 2: DC ELECTRICAL CHARACTERISTICS
Symbol VCC ICC ICQ IOFF VREG Parameter Supply Voltage at pins 4, 14, 15, 16 Supply Current @ POUT = 23 dBm at VCC = 3.3V VCC quiescent current Shut down current Reference Voltage for recommended application 130 <1.0 2.85 Min. 2.7 Typ 3.3 Max. 3.6 400 Unit V mA mA A V
T2.0 1278
Test Conditions
(c)2006 SST Communications Corp.
S71278-01-000
1/06
4
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications TABLE 3: AC ELECTRICAL CHARACTERISTICS FOR CONFIGURATION
Symbol FL-U Parameter Frequency range Output power with 4% EVM at 54 Mbps OFDM signal when operating at 3.3V VCC Output power level with 802.11a mask compliance across 4.9-5.8 GHz Linear gain across 4.9~5.8GHz Gain variation over band (4.9-5.8 MHz) GVAR Gain variation over band (4.9-5.35 MHz) Gain variation over band (5.7-5.8 MHz) Gain variation over channel (20 MHz) Det Det_ref S 2f, 3f, 4f, 5f Power detector output voltage range Power detector output reference Power detector sensitivity Harmonics at 22 dBm, without trapping capacitors 0.5 0.5 0.6 0.03 -40 0.2 2.0 23 32 3 1.5 1 Min 4.9 21 Typ Max 5.8 Unit GHz dBm dBm dB dB dB dB dB V V V/dB dBc
T3.1 1278
Linearity
G
(c)2006 SST Communications Corp.
S71278-01-000
1/06
5
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
TYPICAL PERFORMANCE CHARACTERISTICS TEST CONDITIONS: VCC = 3.3V, TA = 25C, VREG1,2 = 2.85V UNLESS OTHERWISE NOTED
S11
0 40 30 20 -10 10 -15 0 -20 -10 -25 -20 -30 0 2 4 6 8 10 0 2 4
S21
-5
-30
6
8
10
Frequency (GHz)
Frequency (GHz)
S12
-30 0
S22
-40
-5
-50
-10
-60
-15
-70
-20
-80
-25
-90 0 2 4 6 8 10
-30 0 2 4 6 8 10
Frequency (GHz)
Frequency (GHz)
1278 S-Parms.0.0
FIGURE 2: S-PARAMETERS
(c)2006 SST Communications Corp.
S71278-01-000
1/06
6
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
TWO-TONE MEASUREMENTS TEST CONDITIONS: F = 1 MHZ
30
25
Output Power (dBm)
20 4.9 GHz 15 5.25 GHz 5.8 GHz
10
1278 OutVInp.0.0
5
0 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4
Input Power (dBm)
FIGURE 3: OUTPUT POWER VERSUS INPUT POWER
600 550 500 450 4.9 GHz 5.25 GHz 400 350 300 250 200 150 100 14 15 16 17 18 19 20 21 22 23 24 25 26 27
1278 ICCvOut.0.0
ICC_total (mA)
5.8 GHz
Output Power (dBm)
FIGURE 4: POWER SUPPLY CURRENT VERSUS OUTPUT POWER
(c)2006 SST Communications Corp. S71278-01-000 1/06
7
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
40 38 36 34 32 30 28 26 24 22 20
1278 PGainvOutP.0.0
Gain (dB)
4.9 GHz 5.25 GHz 5.8 GHz
15
16
17
18
19
20
21
22
23
24
25
26
Output Power (dBm)
FIGURE 5: POWER GAIN VERSUS OUTPUT POWER
-20
-25
-30
IMD3 (dBc)
-35
-40
4.9 GHz 5.25 GHz
1278 IMD3vOutP.0.0
5.8 GHz -45
-50 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Output Power (dBm)
FIGURE 6: IMD3 VERSUS OUTPUT POWER
(c)2006 SST Communications Corp.
S71278-01-000
1/06
8
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
ACPR FOR 54 MBPS OFDM SIGNALS
FIGURE 7: FREQUENCY = 4.9 GHZ AT POUT = 23.5 DBM WITH ICC = 395 MA
FIGURE 8: FREQUENCY = 5.18 GHZ AT POUT = 23.5 DBM WITH ICC = 390 MA
(c)2006 SST Communications Corp.
1278 ACPR.4.9GHz.0.0
1278 ACPR.4.9GHz.0.0
S71278-01-000
1/06
9
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
FIGURE 9: FREQUENCY = 5.32 GHZ AT POUT = 23.5 DBM WITH ICC = 385 MA
FIGURE 10: FREQUENCY = 5.8 GHZ AT POUT = 23.5 DBM WITH ICC = 365 MA
(c)2006 SST Communications Corp.
1278 ACPR.5.8GHz.0.0
1278 ACPR.5.32GHz.0.0
S71278-01-000
1/06
10
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
EVM FOR 54 MBPS OPERATION
10 9 8 7 4.92 GHz 5.18 GHz 5.32 GHz 5.805 GHz
EVM (%)
6 5 4 3 2 1 0 15
16
17
18
19
20
21
22
23
Output Power (dBm)
FIGURE 11: EVM VERSUS OUTPUT POWER
1.60 1.50 1.40
Freq=4.9 2 GHz (25 C) Freq=5.1 8 GHz (25 C) Freq=5.3 2 GHz (25 C) Freq=5.8 05 GH z (25 C) Freq=4.9 2 GHz (-10 C) Freq=5.1 8 GHz (-10 C) Freq=5.3 2 GHz (-10 C) Freq=5.8 05 GH z (-10 C) Freq=4.9 2 GHz (85 C) Freq=5.1 8 GHz (85 C) Freq=5.3 2 GHz (85 C) Freq=5.8 05 GHz (85 C)
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -1 0 1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
FIGURE 12: DETECTOR CHARACTERISTICS OVER TEMPERATURE AND FREQUENCY
(c)2006 SST Communications Corp.
S71278-01-000
1278 F12.0
1278 EVMvOutP.1.0
1/06
11
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
1.60 1.50 1.40 Freq = 4 .92 GHz (Matched) Freq = 4 .92 GHz (Max) Fre q = 4.92 GHz (Min)
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90
1278 F13.0
0.80 0.70 0.60 -1 0 1 2 3 4 5 6 7 8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
FIGURE 13: DETECTOR CHARACTERISTICS AT ROOM TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES AT 4.92 GHZ
1.60 1.50 1.40
Freq = 5.18 GHz (Matched) Freq = 5.18 GHz (Max) Freq = 5.18 GHz (Min)
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90
1278 F14.0
0.80 0.70 0.60 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
FIGURE 14: DETECTOR CHARACTERISTICS AT ROOM TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES AT 5.18 GHZ
(c)2006 SST Communications Corp.
S71278-01-000
1/06
12
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
1.60 1.50 1.40 Freq = 5 .32 GHz (Matched) Freq = 5 .32 GHz (Max) Fre q = 5.32 GHz (Min)
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90
1278 F15.0
0.80 0.70 0.60 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
FIGURE 15: DETECTOR CHARACTERISTICS AT ROOM TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES AT 5.32 GHZ
1.60 1.50 1.40 1.30 1.20 1.10 1.00 0.90
1278 F16.0
Freq = 5 .805 GHz (Matched) Freq = 5 .805 GHz (Max) Freq = 5 .805 GHz (Min)
0.80 0.70 0.60 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
FIGURE 16: DETECTOR CHARACTERISTICS AT ROOM TEMPERATURE WITH 2:1 OUTPUT VSWR ALL PHASES AT 5.805 GHZ
(c)2006 SST Communications Corp.
S71278-01-000
1/06
13
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
1.60 1.50 1.40 Freq=4.92 GHz (M atche d) Freq=5.18 GHz (M atche d) Freq=5.32 GHz (M atche d) Freq=5.805 GH z (Matched) Freq=4.92 GHz (M in) Freq=5.18 GHz (M in) Freq=5.32 GHz (M in) Freq=5.805 GH z (Min) Freq=4.92 GHz (M ax) Freq=5.18 GHz (M ax) Freq=5.32 GHz (M ax ) Freq=5.805 GH z (Max)
Detector Voltage (V)
1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -1 0 1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
FIGURE 17: DETECTOR CHARACTERISTICS AT ROOM TEMPERATURE OVER FREQUENCY WITH 2:1 OUTPUT VSWR ALL PHASES
VCC 25 0.1 F
100 pF*
0.1 F*
0.1 F
0~40 mil
10 F
0.1F
16 1
15
14
13 12
50
50 (100 ~ 200 mils) 0.5 pF
2
11
80 mil/60 mil**
50 50 RFOUT
50 RFin
3
10
4
0.1 F
Bias Circuit
5 6 7 8
0.5 pF/0402 Hi-Q, typically Johanson S-series
9
10 pF
Test Conditions
VREG = 2.85V VCC=3.3V
10 pF 100 pF
*As close as possible to package **For 8-10 mil FR4 dielectric board
VREF
Det_ref
Det
1278 Schematic.0.2
FIGURE 18: TYPICAL APPLICATION FOR HIGH-POWER 802.11A APPLICATION
(c)2006 SST Communications Corp. S71278-01-000 1/06
14
1278 F17.0
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
PRODUCT ORDERING INFORMATION
SST11LP SSTXXLP 12 XX QC XX F X Environmental Attribute F1 = non-Pb / non-Sn contact (lead) finish: Nickel plating with Gold top (outer) layer Package Modifier C = 16 contact Package Type Q = WQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 1 = 4.9-5.8 GHz Product Line 1 = SST Communications
1. Environmental suffix "F" denotes non-Pb/non-SN solder. SST non-Pb/non-Sn solder devices are "RoHS Compliant".
Valid combinations for SST11LP12 SST11LP12-QCF SST11LP12 Evaluation Kits SST11LP12-QCF-K
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2006 SST Communications Corp.
S71278-01-000
1/06
15
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
0.2
BOTTOM VIEW
See notes 2 and 3 Pin #1 1.7
Pin #1 3.00 0.075 1.7 0.075 3.00 0.075 0.05 Max 0.80 0.70 0.30 0.18
0.5 BSC
0.45 0.35
1mm
Note: 1. Complies with JEDEC JEP95 MO-220J, variant WEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min).
16-wqfn-3x3-QC-0.3
16-CONTACT VERY-THIN QUAD FLAT NO-LEAD (WQFN) SST PACKAGE CODE: QC TABLE 4: REVISION HISTORY
Revision 00 01 Description Date Jan 2005 Jan 2006
* * * * * * *
S71278: SST conversion of data sheet GP1112 Corrected the spectrum mask value in "Product Description" on page 1 to read 802.11a Corrected the solder reflow temperature under "Absolute Maximum Stress Ratings" on page 4 Updated sales and marketing contact information Changed VQFN to WQFN Updated Product Ordering information Updated Table 3 on page 5.
(c)2006 SST Communications Corp.
S71278-01-000
1/06
16
4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12
Preliminary Specifications
CONTACT INFORMATION Marketing
SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605
Sales
NORTH AMERICA Silicon Storage Technology, Inc. Les Crowder Technical Sales Support - North America Tel: 949-495-6437 Fax: 949-495-6364 E-mail: lcrowder@sst.com ASIA PACIFIC NORTH SST Macao H. H. Chang Senior Director, Sales Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: (853) 706-022 Fax: (853) 706-023 E-mail: hchang@sst.com ASIA PACIFIC SOUTH SST Communications Co. Sunny Tzeng Sales Manager 4F-2, No. 24, Lane 123, Sec.6, Min Chuan E. Rd Taipei 114, Taiwan, R.O.C. Tel: +886-22795-6877 Ext. 163 Fax: +886-9792-1241 E-mail: stzeng@sst.com KOREA SST Korea Charlie Shin Country Manager Rm# 1101 DonGu Root Bldg, 16-2 Sunae-Dong, Bundang-Gu, Sungnam, Kyunggi-Do Korea, 463-020 Tel: (82) 31-715-9138 Fax: (82) 31-715-9137 Email: cshin@sst.com
EUROPE Silicon Storage Technology Ltd. Ralph Thomson Applications Manager Mark House 9-11 Queens Road Hersham KT12 5LU UK Tel: +44 (0) 1869 321 431 Cell: +44 (0) 7787 508 919 E-mail: rthomson@sst.com JAPAN SST Japan Jun Kamata Sales Director 9F Toshin-Tameike Bldg, 1-1-14 Akasaka, Minato-ku, Tokyo, Japan 107-0052 Tel: (81) 3-5575-5515 Fax: (81) 3-5575-5516 Email: jkamata@sst.com
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2006 SST Communications Corp. S71278-01-000 1/06
17

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